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Cryogenic vacuum high frequency probe stationLASKAR, J; KOLODZEY, J.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 5, pp 1161-1165, issn 0734-211XArticle

Tunneling injection into modulation doping structures: a mechanism for negative differential resistance three-terminal high-speed devicesLEBURTON, J.-P; KOLODZEY, J.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 9, pp 1530-1532, issn 0018-9383Article

Analysis of high-temperature materials for application to electric weapon technologyKATULKA, G. L; KOLODZEY, J; OLOWOLAFE, J et al.IEEE transactions on magnetics. 1999, Vol 35, Num 1, pp 356-360, issn 0018-9464, 1Conference Paper

Electrical effects of DNA molecules on silicon field effect transistorXUAN, G; KOLODZEY, J; KAPOOR, V et al.IEEE Lester Eastman conference on high performance devices. 2004, pp 60-65, isbn 981-256-196-X, 1Vol, 6 p.Conference Paper

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Bipolar tunneling field-effect transistor: a three-terminal negative differential resistance device for high-speed applicationsLEBURTON, J. P; KOLODZEY, J; BRIGGS, S et al.Applied physics letters. 1988, Vol 52, Num 19, pp 1608-1610, issn 0003-6951Article

Negative differential resistance in ultrathin Ge-on-insulator FETsKAZAZIS, D; ZASLAVSKY, A; TUTUC, E et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S1-S4Conference Paper

Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVDITO, Ryota; SAKURABA, Masao; MUROTA, Junichi et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S38-S41Conference Paper

On the scaling of emitter stripes of SiGe power HBTsGUOGONG WANG; YUAN, Hao-Chih; ZHENQIANG MA et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S84-S88Conference Paper

Effects of ambient conditions in thermal treatment for Ge(0 01) surfaces on Ge-MIS interface propertiesTAOKA, Noriyuki; IKEDA, Keiji; YAMASHITA, Yoshimi et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S114-S117Conference Paper

Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals : evidence of implant damage enhanced diffusivitiesCARROLL, M. S; KOUDELKA, R.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S164-S167Conference Paper

Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) methodUSUDA, K; IRISAWA, T; NUMATA, T et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S227-S230Conference Paper

Simulations of non-uniform, nonlinear collector doping profiles for SiGe HBTsPREISLER, E. J; CAI, W; ZHENG, J et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S144-S148Conference Paper

Strain relaxation in strained-Si layers on SiGe-on-insulator substratesHIRASHITA, N; MORIYAMA, Y; SUGIYAMA, N et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S21-S25Conference Paper

X-band and K-band low-phase-noise VCOs using SiGe BiCMOS technologyTARTARIN, J. G; WONG, K. W.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S195-S199Conference Paper

The electrical characteristics of silicon carbide alloyed with germaniumKATULKA, G; ROE, K; KOLODZEY, J et al.Applied surface science. 2001, Vol 175-76, pp 505-511, issn 0169-4332Conference Paper

The electrical properties of MIS capacitors with ALN gate dielectricsADAM, T; KOLODZEY, J; SWANN, C. P et al.Applied surface science. 2001, Vol 175-76, pp 428-435, issn 0169-4332Conference Paper

Structural, optical and electronic properties of oxidized ain thin films at different temperaturesENAM AHMED CHOWDHURY; DASHIELL, M; SUEHLE, J et al.Journal of electronic materials. 1998, Vol 27, Num 7, pp 918-922, issn 0361-5235Article

Effect of reduced temperature on the f_T of AlGaAs/GaAs heterojunction bipolar transistorsLASKAR, J; HANSON, A. W; CUNNINGHAM, B. T et al.IEEE electron device letters. 1991, Vol 12, Num 6, pp 329-331, issn 0741-3106, 3 p.Article

High indium content graded channel GaInAs/AlInAs pseudomorphic MODFETsLASKAR, J; KOLODZEY, J; CHO, A. Y et al.Journal of electronic materials. 1990, Vol 19, Num 3, pp 249-252, issn 0361-5235Article

Measurement of the minority-carrier diffusion length in thin semiconductor filmsCHING-LANG CHIANG; SCHWARZ, R; SLOBODIN, D. E et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1587-1592, issn 0018-9383Article

Radiation damage by 12 MeV protons and annealing of hydrogenated amorphous siliconSCHWARZ, R; KOLODZEY, J; ALJISHI, S et al.IEEE photovoltaic specialists conference. 18. 1985, pp 903-908Conference Paper

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Determination of the surface segregation ratio of P in Si(100) during solid-source molecular beam epitaxial growthTHOMPSON, Phillip E; JERNIGAN, Glenn G.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S80-S83Conference Paper